Spreading Resistance Analysis (SRA) determines a resistivity-depth profile in silicon. To calculate carrier concentration values, we use carrier mobility values
derived from Thurber, Mattis, Liu, and Filliben, National Bureau of Standards Special Publication 400-64, The Relationship Between Resistivity and Dopant Density for
Phosphorus-and Boron-Doped Silicon (May 1981), Table 10, Page 34 and Table 14, Page 40.
To calculate germanium carrier concentration values, we use carrier mobility values
derived from D. B. Cuttriss, Bell System Technical Journal (March 1961) Page 509. We hope you find the following chart useful.