Posted by Dan (126.96.36.199) on May 09, 2012 at 17:41:06:
In Reply to: SRP for GaN posted by dirk gravesteijn on May 04, 2012 at 19:46:30:
: We would like to have a measurement of the electrical activity in GaN layers on Si (111). The GaN buffer layers in these substrates are doped with C up to 1e18 to 1 e19 cm-3. On top of the buffer layers is a 2DEG, but that is not so relevant for our request Thickness of the buffer layers is several microns. Would it be possible to do an experiment on this kind of structures??
We have had some success profiling III-V materials however we have not been able to get measurable resistances on GaN. GaN is an insulator as far as our instruments are concerned. We would be able to profile the Si below the GaN to see what if any, dopants have migrated out of the GaN.