Posted by dirk gravesteijn (188.8.131.52) on May 04, 2012 at 19:46:30:
We would like to have a measurement of the electrical activity in GaN layers on Si (111). The GaN buffer layers in these substrates are doped with C up to 1e18 to 1 e19 cm-3. On top of the buffer layers is a 2DEG, but that is not so relevant for our request Thickness of the buffer layers is several microns. Would it be possible to do an experiment on this kind of structures??