Posted by Yue Zu (22.214.171.124) on January 11, 2011 at 13:23:38:
In Reply to: Re: SIMS VS. SRP posted by Roger Brennan on December 23, 2010 at 18:41:38:
: : How can i get the atomic concentration (atoms/cm^3) from SRP profile?
: In single crystal, (i.e. good carrier mobility), SRP calculates a value equal to the net electrically active atomic concentration exclusive of space-charge (depletion) regions. To put it another way, there is often nearly a 1:1 ratio between carrier concentration and atomic (dopant) concentration. Exceptions are electrical junctions, poly, unannealed implants, and VERY high dopant concentrations. One thought to keep in mind is the carrier concentration (SRP) almost exclusively controls the device performance.
You said depletion region is the exception of 1:1 ratio of dopant concentration and carrier concentration. My questions is then how the dopant concentration is calculated and reported by SRP at the depletion region. Is there a different formular used to compensate for the depletion effect? We are feeding the SRP profile into TCAD simulation. By doing that, are we letting the already depleted profile to deplete again?