Posted by Natalita Nursam (126.96.36.199) on March 15, 2010 at 19:46:48:
I need to get carrier concentration profiles of heavily doped boron emitter on c-Si substrates with a 70 nm plasma silicon nitride film on top.
My questions are:
1. Is it necessary to etch the silicon nitride film prior to the 2 point probe measurement? the same question applies for the case of silicon oxide coated sample.
2. Can we use SRP to get the dopant concentration (in particularly boron) that may exist on the insulator film such as silicon nitride or oxide?