Posted by Lee,DongKyu (188.8.131.52) on June 28, 2005 at 00:21:08:
I have two questions.
First question is...
My sample is bismuth implanted silicon wafer. (bismuth 7keV 1E15/cm^2 implanted sample) As I know, bismuth has the low equilibrium solid solubility limit (8*10^17 cm^-3 at 1320”ĘC) in Si single crystal.
So if I analyze my samples with SRP, then I think the results would be bad. What I mean is the concentration will maybe almost 1018 or below 1018. What do you think about it?
Second question is...
When I anneal the samples, likely native oxide will be formed on the surface.
So when I send the samples, should I remove it or just leave it?